tssop-8 unit: mm 1:drain1 2 : source1 3 : source1 4:gate1 5:gate2 6 : source2 7 : source2 8:drain2 features low on resistance. 2.5v drive. mounting height 1.1mm composite type, facilitating high-density mounting. absolute maximum ratings ta = 25 parameter symbol rating unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 10 v drain current(dc) i d 5a drain current (pulse) (pw 10s) i dp 20 a allowable power dissipation p d 0.8 w total dissipation p t 1.3 w channel temperature t ch 150 storage temperature t stg -55 to +150 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type ic KTD2017 product specification
smd type ic smd type ic switching time test circuit electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-to source breakdown voltage v (br)dss i d =1ma, v gs =0 20 v drain cut-off current i dss v ds =20v,v gs =0v 1 a gate leakage current i gss v gs = 8v,v ds =0v 10 a gate cut-off voltage v gs(off) v ds =10v,i d =1ma 0.4 1.3 v forward transfer admittance y fs v ds =10v,i d = 5 a 11.2 16 s r ds(on)1 v gs =4v,i d =4a 17 23 m r ds(on)2 v gs =2.5v,i d =2a 20 29 m input capacitance c iss v ds = 10 v,f = 1 mhz 1500 pf output capacitance c oss v ds = 10 v,f = 1 mhz 350 pf reverse transfer capacitance c rss v ds = 10 v,f = 1 mhz 230 pf turn-on delay time t d(on) 19 ns rise time t r 190 ns turn-off delay time t d(off) 90 ns fall time t f 160 ns total gate charge q g 42 nc gate-source charge q gs 4nc gate-drain charge q gd 8nc diode forward voltage v sd i f =5a,v gs =0v 0.8 1.2 v static drain to source on-state resistance see specified test circuit v ds =10v,v gs =10v,i d =5a KTD2017 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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